ALD One™

Our advanced atomic layer processing platform delivers excellent precision and process flexibility. This platform is built to push the boundaries of thin film engineering.

Whether used as a standalone platform or seamlessly integrated into a cluster system, our ALD solution is engineered for scalability, reliability, and real-time process optimization.

Features & Capabilities

Standalone & Cluster Integration
Expandable for high-throughput pilot or commercial-scale manufacturing.

Film Thickness Uniformity
 ±1% (1σ) for thermal ALD of Al₂O₃ on a
ø200 mm wafer.

Advanced In-Situ Monitoring
Real-time film growth tracking with ellipsometry & quartz crystal monitoring.

Substrate Compatibility
Up to Ø300 mm wafers or 210 mm × 210 mm (M12/G12) solar wafers.

alt = A glove box system labeled 'Inert' and 'PURE LAB' is a white rectangular enclosure with multiple black rubber glove ports for manipulation in the sealed chamber. The system includes a cylindrical attachment on the right and a digital monitor mounted above, providing detailed control and operational data. The design indicates an advanced setup for handling sensitive materials in a controlled environment.

Glovebox Integration
Controlled environment for sensitive materials.

Hollow Cathode Design
Plasma Source
Clean, oxygen-free nitride processes.

Process Control & Stability:
Differential pressure management between reactor and outer chamber for contamination-free processing.

Partnering with Angstrom Engineering®

Partnering with us means gaining access to a team of top-tier engineers and scientists, ensuring expert collaboration, rapid problem-solving, and tailored system optimization. Our commitment to innovation empowers researchers to achieve breakthrough advancements in thin film technology.

ALD In The Field

“Working with Angstrom Engineering® has been a great experience. The ALD reactor is easy to use, and the software is intuitive and working excellently. I’ve found it nice that this is a company where you deal with people throughout the organization, including the very top. Throughout our collaboration, business never got in the way of science and facts.”

David Emslie,
McMaster University

Advanced Process Control Software

  • PC/PLC-controlled recipes for single, batch, or automated processes.
  • Advanced data logging and process tracking ensure consistent and repeatable processes.
  • The central control station manages each module and schedules the processes in each chamber.
  • Independent control of multiple chambers (if applicable).
  • Complex recipes can be created and modified easily.
  • Automatic PID control loop tuning significantly reduces process development time.

Learn more about Aeres®.

Why ATOMIC lAYER PROCESSING

Atomic Layer Deposition (ALD) is a sophisticated thin-film deposition technique that achieves excellent precision and uniformity through sequential, self-limiting surface reactions.

In this process, precursor gases are introduced into a reaction chamber in alternating pulses, each followed by an inert purge to prevent gas-phase interactions. This controlled, stepwise approach ensures that film growth is dictated solely by surface chemistry, enabling atomic-scale accuracy in thickness control.

Advantages

Ability to produce exceptionally conformal coatings, even on substrates with intricate geometries, high aspect ratios, or porous structures.

Achieve uniform coverage on complex surfaces.

Operates at relatively low temperatures.

Compatible with heat-sensitive materials while maintaining superior film quality and stoichiometric control.

 Supports a vast array of materials, including oxides, nitrides, sulfides, and metals, offering versatility in material engineering.

Enables the deposition of both insulating and conductive films.

With its precision, repeatability, and ability to engineer ultra-thin films with atomic-scale accuracy, ALD stands as a cornerstone technology for next-generation nanotechnology, catalysis, and high-performance coatings.

ALD Processes, Precursors, & Related Materials

A wide range of films may be deposited using ALD, including many technologically important insulators, semiconductors, and metals. The following ALD Database is a curated collection of atomic layer deposition (ALD) processes, precursors, and related materials.
Hosted by Atomic Limits, the database helps users identify suitable ALD precursors and process parameters for various applications in nanotechnology, semiconductors, and thin-film coatings.

This work is licensed under a Creative Commons Attribution 4.0 International License.
If you want to refer to this database, you can use the DOI: 10.6100/alddatabase