Chemical Vapor Deposition
Chemical Vapor Deposition
Diffusion Furnace
Diffusion furnaces are used for applications that require sustained, high temperatures at moderate vacuum. This could include thermal oxide growth, doping, and dopant diffusion. Typically, these furnaces are quite large and can accommodate a large quantity of substrates. Thermal oxide growth on silicon is carried out at very high temperatures, accompanied by the flow of oxygen-containing gas. Oxides grown this way are very high quality in terms of dielectric and morphological properties.
Wafers can also be doped in diffusion furnaces by exposing them to a flux of dopant atoms by sublimation/evaporation from a solid/liquid source or by a gas source. Further to this, dopant diffusion may be carried out by heating wafers for a time necessary to achieve the desired doping profile.
Dr. Peter Lomax
University of Edinburgh, UK
We have an Angstrom Engineering sputter platform, as well as an electron beam evaporation tool. The software has made both systems, which are used for a wide range of materials, simple to use. Furthermore, the ability for the Angstrom team to remotely connect to the software and platform has been particularly useful. We have been very impressed with the level of communication from Angstrom Engineering, who have kept us informed at all stages of the design and delivery process, offering advice on facilities when needed. Service and support have also been excellent, with very rapid turnaround when ordering materials, which have arrived as quickly as our UK-based vendors.